Innovative DRAM / LRTDRAM

LRTDRAM^TM

Traditional DRAM cells leak charge over time which causes data loss, especially when the temperature rises; therefore, DRAM cells are periodically refreshed to prevent data loss due to leakage. In addition, the refresh rate needs to be further increased in higher temperature environments. However, frequent refresh will lead to higher efficiency loss during data accesses.

Etron’s innovative LRTDRAM^TM can extend the retention time of DRAM substantially under the JEDEC standard, which is best-fit for high-temperature applications, such as automotive or KGDM, and brings significant improvements of overall DRAM performances.

In general, when the temperature is lower than 85°C, the efficiency loss for LRTDRAM is half of that for traditional DRAM. As the temperature and product density increases, LRTDRAM can offer a more significant improvement on product performance. For example, LRTDRAM stays almost consistent with the percentage of efficiency loss at an increase of up to 4.4% at 105°C to 125°C %(4Gb) while traditional DRAM may suffer approximately 26.6% of efficiency loss. The data certainly shows great benefits brought by Etron’s LRTDRAM.