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Etron Technology Provide Completed Specialty Buffer DRAM Chipswith Revolutionary New DRAM–RPC DRAM for 5G Broadband Gateways, Smart Speaker the AI On-Device and 360° Spherical Camera Solutions

FOR IMMEDIATE RELEASE[NEWS RELEASE]Etron Technology Provide Completed Specialty Buffer DRAM Chips with Revolutionary New DRAM–RPC DRAM for 5G Broadband Gateways, Smart Speaker the AI On-Device and 360° Spherical Camera Solutions Etron Technology, Inc (TPEx: 5351.TW) provides comprehensive buffered memory products, suitable for capacity SDR, DDR, DDR2, DDR3, LP DDR from 16Mb, 64Mb, 128Mb, 256Mb, 512Mb, 1Gb, 2Gb, 4Gb to 8Gb, especially the high-capacity products that used up 25-nanometer process which have been mass-produced. It provides commercial specifications for consumer products and stringent industrial standards; the solutions also meet the highest vehicle specifications.Etron has developed new DRAM architecture – RPC DRAM- featuring x16 DDR3 – LPDDR3 bandwidth but using only 22 switching signals in a 50 ball FI-WLCSP Package. The 256 Mbit DRAM is 2 x 4.7 mm. All 50 balls fit within the perimeter of the die using an industry standard 400 micron ball pitch making it the ideal memory for the usage in many wearable video-enabled IOT devices.Benefits from using the new Etron DRAM are found on the system ASIC too. A PHY used with the new Etron DRAM has 22 switching signals out of a total of 50 PHY bonding pads. The same bandwidth in a DDR3 PHY requires 47 switching signals (x16 data bus) and a total of ~100 bonding pads. The new Etron DRAM uses less than half the bonding pads on the system ASIC for the memory interface vs DDR3 of the same bandwidth. Depending on the design of the system ASIC, a hypothetical pad-limited edge-bonded die with 240 leads has 60 bonding pads per side and 100 total pads reserved for the DDR3 interface. Substituting the PRC DRAMTM PHY saves a total of 50 bonding pads total or 12 per side. Comparing the two memory interface options implemented on hypothetical pad-limited ASICs shows the ASIC designed to use the Etron DRAM to be significantly smaller 56.25%. The next generation of consumer electronic gadgets will feature a growing number of wearable devices, many including video capture and/or playback functions. In response to high-bandwidth, low-latency, and ubiquitous networking needs, the 5G communication and the high speed of Low Power Wide Area Network (LPWAN) are critical to the future AIOT development. With edge devices becoming capable of performing complicated computational tasks, edge computing has become a major trend of Artificial Intelligence (AI). Etron provides a complete DDR2/DDR3 SDRAM and SPI NAND memory solution for the gateway application, which facilitates a network system containing various dedicated gateways for connecting between the cloud server and the terminal device. As well, it is also available to smart speakers for smart home entrance core devices. It supports voice control plus neural network operations with deep learning to process an environment’s sound.The company develops mobile memory products with high-bandwidth and low-density. Currently, 256Mb LPDDR2 products spec with low power consumption and 32 I/O. They are not only suited for integration into the 4K display, but also the 360° Spherical camera solutions, which supports high-resolution 3D stereoscopic recording. This impressed the users with a specific and distinct image, thus make the immersive experience better than ever.Etron’s Revolutionary New DRAM – RPC DRAM will provide the smallest package of buffer memory required in audio and video multimedia streaming systems, benefit in the minimization of special application ASIC system design. It can be imported into a small AIOT system architecture to support wearable devices, so that it can be applied to daily life and accelerate the popularization of AI-on-Edge! Meet Etron Team in Computex Taipei 2019 (May 28- Jun 1) at booth No. S0410, Taipei Nangang Exhibition Hall 2. About Etron TechnologyEtron Technology, Incorporated (TPEx: 5351.TW) is a world-class fabless IC and Heterogeneous Integration (HI) Silicon design house with products ranging from Consumer Electronics DRAM (CEDRAM), Known-Good-Die Memory (KGDM), RPC (Reduced-Pin-Count) DRAM; USB3.1 Gen2 Type-C high speed switch/mux controller with Power Delivery; and 3D Depthmap and Stereoscopic Vision Sensing & Spherical Image-Processing ICs and Subsystems. www.etron.comFor further information, please contact:Corporate Spokesperson:Ms. Justine Tsai Corporate Deputy Spokesperson:Mr. Eason ChengTel: +886-3-578-2345 #8670Email: