Home » 新闻中心 » A Second-Path Moore’s Law Scaling (2PMLS) Below 10nm to Optimize PPACT- Part I: Inventions on Outside-Gate Structures for Fin/GAA-Transistors and 6T SRAM Cells with Modeling Results
2025/06/02
A Second-Path Moore's Law Scaling (2PMLS) Below 10nm to Optimize PPACT- Part I: Inventions on Outside-Gate Structures for Fin/GAA-Transistors and 6T SRAM Cells with Modeling Results
